Low voltage I-V characteristics in magnetic tunneling junctions

被引：20

作者：

Cabrera, GG

García, N

机构：

[1] Univ Estadual Campinas, Inst Fis Gleb Wataghin, BR-13083970 Campinas, SP, Brazil

[2] CSIC, Lab Fis Sistemas Pequenos & Nanotecnol, E-28006 Madrid, Spain

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 10期

关键词：

D O I：

10.1063/1.1433168

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We show that elastic currents, which take into account variations of the tunneling transmission with voltage and a large ratio of majority to minority spin densities of states of the conduction band at the Fermi level, can account for the low voltage current anomalies observed in magnet-oxide-magnet junctions. (C) 2002 American Institute of Physics.

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收藏

页码：1782 / 1784

页数：3

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