Tunneling criteria for magnetic-insulator-magnetic structures

被引:54
作者
Åkerman, JJ
Slaughter, JM
Dave, RW
Schuller, IK
机构
[1] Motorola Labs, Phys Sci Res Labs, Tempe, AZ 85284 USA
[2] Univ Calif San Diego, Phys Dept 0319, La Jolla, CA 92093 USA
关键词
D O I
10.1063/1.1413716
中图分类号
O59 [应用物理学];
学科分类号
摘要
The bias and temperature dependent resistance and magnetoresistance of magnetic tunnel junctions with and without intentional shorts through the insulating barrier were studied. Based on the experimental results, a set of quality criteria was formulated that enables the identification of barrier shorts. While the temperature and bias dependencies of the junction resistance and of the fitted barrier parameters are very sensitive to the presence of such shorts, the same dependencies of the magnetoresistance are surprisingly insensitive. Finally, junctions with a shorted barrier exhibit a dramatic increase in noise level and junction instability. (C) 2001 American Institute of Physics.
引用
收藏
页码:3104 / 3106
页数:3
相关论文
共 21 条
[1]   TUNNELING CONDUCTANCE OF ASYMMETRICAL BARRIERS [J].
BRINKMAN, WF ;
DYNES, RC ;
ROWELL, JM .
JOURNAL OF APPLIED PHYSICS, 1970, 41 (05) :1915-&
[2]   Ballistic magnetoresistance in transition-metal nanocontacts:: The case of iron [J].
García, N ;
Muñoz, M ;
Zhao, YW .
APPLIED PHYSICS LETTERS, 2000, 76 (18) :2586-2587
[3]   Magnetoresistance in excess of 200% in ballistic Ni nanocontacts at room temperature and 100 Oe [J].
García, N ;
Muñoz, M ;
Zhao, YW .
PHYSICAL REVIEW LETTERS, 1999, 82 (14) :2923-2926
[4]   Reliability of normal-state current-voltage characteristics as an indicator of tunnel-junction barrier quality [J].
Jönsson-Åkerman, BJ ;
Escudero, R ;
Leighton, C ;
Kim, S ;
Schuller, IK ;
Rabson, DA .
APPLIED PHYSICS LETTERS, 2000, 77 (12) :1870-1872
[5]   Temperature-dependent magnetoresistance of magnetic tunnel junctions with ultraviolet light-assisted oxidized barriers [J].
May, U ;
Samm, K ;
Kittur, H ;
Hauch, J ;
Calarco, R ;
Rüdiger, U ;
Güntherodt, G .
APPLIED PHYSICS LETTERS, 2001, 78 (14) :2026-2028
[6]   GIANT MAGNETIC TUNNELING EFFECT IN FE/AL2O3/FE JUNCTION [J].
MIYAZAKI, T ;
TEZUKA, N .
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1995, 139 (03) :L231-L234
[7]   LARGE MAGNETORESISTANCE AT ROOM-TEMPERATURE IN FERROMAGNETIC THIN-FILM TUNNEL-JUNCTIONS [J].
MOODERA, JS ;
KINDER, LR ;
WONG, TM ;
MESERVEY, R .
PHYSICAL REVIEW LETTERS, 1995, 74 (16) :3273-3276
[8]   Pinholes may mimic tunneling [J].
Rabson, DA ;
Jönsson-Åkerman, BJ ;
Romero, AH ;
Escudero, R ;
Leighton, C ;
Kim, S ;
Schuller, IK .
JOURNAL OF APPLIED PHYSICS, 2001, 89 (05) :2786-2790
[9]   Ballistic electron microscopy study of ultrathin oxidized aluminum barriers for magnetic tunnel junctions [J].
Rippard, WH ;
Perrella, AC ;
Buhrman, RA .
APPLIED PHYSICS LETTERS, 2001, 78 (11) :1601-1603
[10]  
Rowell J. M., 1969, Tunneling phenomena in solids, P273