Ballistic electron microscopy study of ultrathin oxidized aluminum barriers for magnetic tunnel junctions

被引:24
作者
Rippard, WH [1 ]
Perrella, AC [1 ]
Buhrman, RA [1 ]
机构
[1] Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USA
关键词
D O I
10.1063/1.1352045
中图分类号
O59 [应用物理学];
学科分类号
摘要
Ballistic electron emission microscopy has been used to study thin aluminum oxide tunnel junction barriers formed both by magnetron sputter deposition and thermal evaporation. We have found that the barriers made by oxidation of evaporated Al become fully formed at a significantly thinner mean deposited thickness (similar to6 Angstrom) than junctions made by sputter deposition. The effective barrier height of the aluminum oxide has been determined to be 1.22 +/-0.05 eV and is independent of the method of deposition, thickness, and oxidation conditions. (C) 2001 American Institute of Physics.
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页码:1601 / 1603
页数:3
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