Effect of discrete impurities on electron transport in ultrashort MOSFET using 3-D MC simulation

被引：52

作者：

Dollfus, P ^{[1
]}

Bournel, A ^{[1
]}

Galdin, S ^{[1
]}

Barraud, S ^{[1
]}

Hesto, P ^{[1
]}

机构：

[1] Univ Paris 11, Inst Elect Fondamentale, UMR, F-91405 Orsay, France

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2004年 / 51卷 / 05期

关键词：

doping fluctuations; Monte Carlo (MC) methods; MOSFETs semiconductor device doping; semiconductor device modeling;

D O I：

10.1109/TED.2004.826844

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper discusses the influence of the channel impurity distribution on the transport and the drive current in short-gate MOSFETs. A careful description of electron-ion interaction suitable for the case of discrete impurities has been implemented in a three-dimensional particle Monte Carlo simulator. This transport model is applied to the investigation of 50-nm MOSFET operation. The results show that a small change in the number of doping impurities or in the position of a single discrete impurity in the inversion layer may significantly influence the drain current. This effect is not only related to threshold voltage fluctuations but also to variations in transport properties in the inversion layer, especially at high drain voltage. The results are analyzed in terms of local fluctuations of electron velocity and current density. In a set of fifteen simulated devices the drive current I-on, determined at V-GS = V-DS = 0.6 V, is found to vary in a range of 23% according to the position of channel impurities.

引用

页码：749 / 756

页数：8

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