RTS amplitudes in decananometer MOSFETs: 3-D Simulation Study

被引：210

作者：

Asenov, A ^{[1
]}

Balasubramaniam, R ^{[1
]}

Brown, AR ^{[1
]}

Davies, JH ^{[1
]}

机构：

[1] Univ Glasgow, Dept Elect & Elect Engn, Device Modeling Grp, Glasgow G12 8LT, Lanark, Scotland

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2003年 / 50卷 / 03期

关键词：

degradation; MOSFET; numerical simulation; random dopants; RTS; trapping;

D O I：

10.1109/TED.2003.811418

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we study the amplitudes of random telegraph signals (RTS) associated with the trapping of a single electron in defect states at the Si/SiO2 interface of sub-100-nm (decananometer) MOSFETs employing three-dimensional (3-D), "atomistic" simulations. Both continuous doping charge and random discrete dopants in the active region of the MOSFETs are considered in the simulations. The dependence of the RTS amplitudes on the position of the trapped charge in the channel and on device design parameters such as dimensions, oxide thickness and channel doping concentration is studied in detail. The 3-D simulations offer a natural explanation for the large variation in the RTS amplitudes measured experimentally in otherwise identical MOSFETs. The random discrete dopant simulations result in RTS amplitudes several times higher compared to continuous charge simulations. They also produce closer to the experimentally observed distributions of the RTS amplitudes. The results highlight the significant impact of single charge trapping in the next generation decananometer MOSFETs.

引用

页码：839 / 845

页数：7

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