Random telegraph signal amplitudes in sub 100 nm (decanano) MOSFETs: A 3D 'atomistic' simulation study

被引：32

作者：

Asenov, A ^{[1
]}

Balasubramaniam, R ^{[1
]}

Brown, AR ^{[1
]}

Davies, JH ^{[1
]}

Saini, S ^{[1
]}

机构：

[1] Univ Glasgow, Device Modelling Grp, Dept Elect & Elect Engn, Glasgow G12 8LT, Lanark, Scotland

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST | 2000年

关键词：

D O I：

10.1109/IEDM.2000.904311

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we use 3D simulations to study the amplitudes of random telegraph signals (RTS) associated with the trapping of a single carrier in interface states in the channel of sub 100 nm (decanano) MOSFETs. Both simulations using continuous doping charge and random discrete dopants in the active region of the MOSFETs are presented. We have studied the dependence of the RTS amplitudes on the position of the trapped charge in the channel and on the device design parameters. We have observed a significant increase in the maximum RTS amplitude when discrete random dopants are employed in the simulations.

引用

页码：279 / 282

页数：4

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