EXPLAINING THE AMPLITUDE OF RTS NOISE IN SUBMICROMETER MOSFETS

被引：107

作者：

SIMOEN, E

DIERICKX, B

CLAEYS, CL

DECLERCK, GJ

机构：

[1] INTERUNIV MICROELECTR CTR,SILICON PROC GRP,B-3001 LOUVAIN,BELGIUM

[2] INTERUNIV MICROELECTR CTR,DIV ADV SEMICOND PROFESSING,B-3001 LOUVAIN,BELGIUM

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1992年 / 39卷 / 02期

关键词：

D O I：

10.1109/16.121702

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper a simple-man's model for the random telegraph signal (RTS) noise amplitude in a submicrometer MOSFET is presented. It will be shown that the channel resistance modulation for a specific trap can be expressed as a product of the normalized "scattering" cross section and of the fractional conductivity change. The model qualitatively describes the experimental temperature and drain current dependence of the RTS amplitude and allows to evaluate the influence of the trap location and nature on the wide scatter in values observed.

引用

页码：422 / 429

页数：8

共 27 条

[1]

DIERCKX B, IN PRESS MEASUREMENT

[2]

DIERICKX B, 1990, THESIS KATHOLIEKE U, pCH4

[3] FREQUENCY-RESPONSE OF SI-SIO2 INTERFACE STATES ON THIN OXIDE MOS CAPACITORS [J].