MODELING OF OHMIC MOSFET OPERATION AT VERY LOW-TEMPERATURE

被引：26

作者：

GHIBAUDO, G

BALESTRA, F

机构：

[1] CNRS, Grenoble, Fr, CNRS, Grenoble, Fr

来源：

SOLID-STATE ELECTRONICS | 1988年 / 31卷 / 01期

关键词：

LOW TEMPERATURE MOBILITY - MOSFET TRANSFER CHARACTERISTICS - OHMIC OPERATION MODELING;

D O I：

10.1016/0038-1101(88)90092-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：105 / 108

页数：4

共 14 条

[1]

ARNOLD E, 1974, APPL PHYS LETT, V25, P706

[2] INFLUENCE OF SUBSTRATE FREEZE-OUT ON THE CHARACTERISTICS OF MOS-TRANSISTORS AT VERY LOW-TEMPERATURES [J].

BALESTRA, F ;

AUDAIRE, L ;

LUCAS, C .

SOLID-STATE ELECTRONICS, 1987, 30 (03) :321-327

[3] TRANSPORT PROPERTIES OF ELECTRONS IN INVERTED SILICON SURFACES [J].

FANG, FF ;

FOWLER, AB .

PHYSICAL REVIEW, 1968, 169 (03) :619-+

[4] AN ANALYTICAL MODEL OF CONDUCTANCE AND TRANSCONDUCTANCE FOR ENHANCED-MODE MOSFETS [J].

GHIBAUDO, G .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 95 (01) :323-335

[5] CONDUCTIVITY NEAR A MOBILITY EDGE IN 2D ELECTRONIC SYSTEMS [J].

GHIBAUDO, G .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (17) :3067-3072

[6]

GHIBAUDO G, 1985, J PHYS C SOLID STATE, V19, P767

[7] SUBSTRATE CURRENT AT CRYOGENIC TEMPERATURES - MEASUREMENTS AND A TWO-DIMENSIONAL MODEL FOR CMOS TECHNOLOGY [J].

HENNING, AK ;

CHAN, NN ;

WATT, JT ;

PLUMMER, JD .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (01) :64-74

[8]

Mott N. F., 1979, ELECT PROCESSES NONC

[9]

PALS J, 1972, PHYS REV B, V7, P754

[10] TIME-DEPENDENCE OF DEPLETION REGION FORMATION IN PHOSPHORUS-DOPED SILICON MOS DEVICES AT CRYOGENIC TEMPERATURES [J].

SAKS, NS ;

NORDBRYHN, A .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (11) :6962-6968

← 1 2 →