CONDUCTIVITY NEAR A MOBILITY EDGE IN 2D ELECTRONIC SYSTEMS

被引：9

作者：

GHIBAUDO, G

机构：

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1984年 / 17卷 / 17期

关键词：

D O I：

10.1088/0022-3719/17/17/015

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：3067 / 3072

页数：6

共 9 条

[1] THRESHOLD CONDUCTION IN INVERSION LAYERS [J].

ADKINS, CJ .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1978, 11 (05) :851-883

[2] CONDUCTION MECHANISMS IN BANDTAILS AT SI-SIO2 INTERFACE [J].

ARNOLD, E .

SURFACE SCIENCE, 1976, 58 (01) :60-70

[3] EVIDENCE OF MOBILITY EDGE IN DEGENERATE SOS FILMS [J].

GHIBAUDO, G ;

TSAMAKIS, D ;

PAPATRIANTAFILLOU, C ;

KAMARINOS, G ;

ROKOFILLOU, E .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1983, 16 (22) :4479-4485

[4]

GOLD A, 1982, J PHYS C, V18, pL815

[5] TEMPERATURE-DEPENDENCE OF SCATTERING IN THE INVERSION LAYER [J].

HARTSTEIN, A ;

FOWLER, AB ;

ALBERT, M .

SURFACE SCIENCE, 1980, 98 (1-3) :181-190

[6]

Mott N. F., 1979, ELECT PROCESSES NONC

[7] GENERALIZED EINSTEIN RELATION FOR THE DIFFUSIVITY-MOBILITY RATIO IN MULTI-BAND DEGENERATE SEMICONDUCTORS [J].

NAG, BR ;

CHAKRAVARTI, AN ;

BASU, PK .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 68 (01) :K75-K80

[8]

NING TH, 1972, PHYS REV B, V12, P4605

[9] ANDERSON TRANSITION IN SILICON INVERSION LAYERS - ORIGIN OF RANDOM FIELD AND EFFECT OF SUBSTRATE BIAS [J].

PEPPER, M .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1977, 353 (1673) :225-246

← 1 →