TEMPERATURE-DEPENDENCE OF SCATTERING IN THE INVERSION LAYER

被引：63

作者：

HARTSTEIN, A

FOWLER, AB

ALBERT, M

机构：

来源：

SURFACE SCIENCE | 1980年 / 98卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(80)90492-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

收藏

页码：181 / 190

页数：10

相关论文

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[7] OXIDE-CHARGE-INDUCED IMPURITY LEVEL IN SILICON INVERSION LAYERS
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[8] ELECTRON-SCATTERING IN SILICON INVERSION LAYERS BY OXIDE AND SURFACE-ROUGHNESS
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[9] HIGH-TEMPERATURE VARIABLE RANGE HOPPING CONDUCTIVITY IN SILICON INVERSION LAYERS
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