ANDERSON TRANSITION IN SILICON INVERSION LAYERS - ORIGIN OF RANDOM FIELD AND EFFECT OF SUBSTRATE BIAS

被引：86

作者：

PEPPER, M ^{[1
]}

机构：

[1] UNIV CAMBRIDGE, CAVENDISH LAB, CAMBRIDGE CB3 OHE, ENGLAND

来源：

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES | 1977年 / 353卷 / 1673期

关键词：

D O I：

10.1098/rspa.1977.0031

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

引用

收藏

页码：225 / 246

页数：22

相关论文

共 43 条

[1] ABELES B, 1975, ADV PHYS, V24, P407, DOI 10.1080/00018737500101431
[2] ADKINS CJ, 1976, J PHYS PARIS C C, V4, P343
[3] FREQUENCY-DEPENDENCE OF ELECTRON CONDUCTIVITY IN SILICON INVERSION LAYER IN METALLIC AND LOCALIZED REGIMES
ALLEN, SJ
TSUI, DC
DEROSA, F
[J]. PHYSICAL REVIEW LETTERS, 1975, 35 (20) : 1359 - 1362
[4] OPTICALLY INDUCED LOCALIZED PARAMAGNETIC STATES IN AMORPHOUS-SEMICONDUCTORS
BISHOP, SG
STROM, U
TAYLOR, PC
[J]. PHYSICAL REVIEW LETTERS, 1976, 36 (10) : 543 - 547
[5] NEW MODEL FOR NEGATIVE VOLTAGE INSTABILITY IN MOS DEVICES
BREED, DJ
[J]. APPLIED PHYSICS LETTERS, 1975, 26 (03) : 116 - 118
[6] SURFACE CHARGE AND STRESS IN SI-SIO2 SYSTEM
BROTHERTON, SD
READ, TG
LAMB, DR
WILLOUGHBY, AF
[J]. SOLID-STATE ELECTRONICS, 1973, 16 (12) : 1367 - 1375
[7] CURRENT UNDERSTANDING OF CHARGES IN THERMALLY OXIDIZED SILICON STRUCTURE
DEAL, BE
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (06) : C198 - C205
[8] SODIUM ION DRIFT THROUGH PHOSPHOSILICATE GLASS-SIO2 FILMS
ELDRIDGE, JM
KERR, DR
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (06) : 986 - &
[9] OXYGEN VACANCY MODEL FOR E'/1 CENTER IN SIO2
FEIGL, FJ
FOWLER, WB
YIP, KL
[J]. SOLID STATE COMMUNICATIONS, 1974, 14 (03) : 225 - 229
[10] SUBSTRATE BIAS EFFECTS ON ELECTRON-MOBILITY IN SILICON INVERSION LAYERS AT LOW-TEMPERATURES
FOWLER, AB
[J]. PHYSICAL REVIEW LETTERS, 1975, 34 (01) : 15 - 17

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