EVIDENCE OF MOBILITY EDGE IN DEGENERATE SOS FILMS

被引：9

作者：

GHIBAUDO, G ^{[1
]}

TSAMAKIS, D ^{[1
]}

PAPATRIANTAFILLOU, C ^{[1
]}

KAMARINOS, G ^{[1
]}

ROKOFILLOU, E ^{[1
]}

机构：

[1] NUCL RES CTR DEMOKRITOS,AGHIA PARASKEVI,ATHENS,GREECE

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1983年 / 16卷 / 22期

关键词：

D O I：

10.1088/0022-3719/16/22/020

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：4479 / 4485

页数：7

共 12 条

[1]

BLAKEMORE JS, 1962, SEMICONDUCTORS STATI

[2] SIMPLE BAND MODEL FOR AMORPHOUS SEMICONDUCTING ALLOYS [J].

COHEN, MH ;

FRITZSCHE, H ;

OVSHINSKY, SR .

PHYSICAL REVIEW LETTERS, 1969, 22 (20) :1065-+

[3]

CULLEN G, 1979, HETEROEPITAXIAL SEMI

[4] GENERAL EXPRESSION FOR THERMOELECTRIC POWER [J].

FRITZSCHE, H .

SOLID STATE COMMUNICATIONS, 1971, 9 (21) :1813-+

[5] SEEBECK EFFECT IN SILICON [J].

GEBALLE, TH ;

HULL, GW .

PHYSICAL REVIEW, 1955, 98 (04) :940-947

[6] ANALYSIS OF THE ELECTRICAL TRANSPORT-PROPERTIES OF SILICON ON SAPPHIRE - USE OF THERMOELECTRIC-POWER MEASUREMENTS [J].

GHIBAUDO, G ;

KAMARINOS, G .

REVUE DE PHYSIQUE APPLIQUEE, 1982, 17 (03) :133-143

[7] THEORY OF THE THERMOELECTRIC POWER OF SEMICONDUCTORS [J].

HERRING, C .

PHYSICAL REVIEW, 1954, 96 (05) :1163-1187

[8]

Mott N. F., 1968, Journal of Non-Crystalline Solids, V1, P1, DOI 10.1016/0022-3093(68)90002-1

[9]

Mott N. F., 1979, ELECT PROCESSES NONC

[10] THERMOPOWER CALCULATION FOR VARIABLE RANGE HOPPING - APPLICATION TO ALPHA-SI [J].

OVERHOF, H .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1975, 67 (02) :709-714

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