ANALYSIS OF THE ELECTRICAL TRANSPORT-PROPERTIES OF SILICON ON SAPPHIRE - USE OF THERMOELECTRIC-POWER MEASUREMENTS

被引：9

作者：

GHIBAUDO, G

KAMARINOS, G

机构：

来源：

REVUE DE PHYSIQUE APPLIQUEE | 1982年 / 17卷 / 03期

关键词：

D O I：

10.1051/rphysap:01982001703013300

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：133 / 143

页数：11

共 36 条

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