INVERSION-LAYERS IN SILICON ON INSULATING SUBSTRATES

被引：11

作者：

ENGLERT, T

LANDWEHR, G

PONTCHARRA, J

DORDA, G

机构：

[1] CEN GRENOBLE,ELECTR LAB,GRENOBLE,FRANCE

[2] CEN GRENOBLE,TECHNOL INFORMAT LAB,GRENOBLE,FRANCE

[3] SIEMENS AG,FORSCH LAB,MUNCHEN,FED REP GER

来源：

SURFACE SCIENCE | 1980年 / 98卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(80)90524-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：427 / 436

页数：10

共 17 条

[1] DETERMINATION OF EXISTING STRESS IN SILICON FILMS ON SAPPHIRE SUBSTRATE USING RAMAN-SPECTROSCOPY [J].

ENGLERT, T ;

ABSTREITER, G ;

PONTCHARRA, J .

SOLID-STATE ELECTRONICS, 1980, 23 (01) :31-33

[2] SURFACE QUANTUM OSCILLATIONS IN SILICON (100) INVERSION LAYERS UNDER UNIAXIAL PRESSURE [J].

ENGLERT, T ;

LANDWEHR, G ;

KLITZING, KV ;

DORDA, G ;

GESCH, H .

PHYSICAL REVIEW B, 1978, 18 (02) :794-802

[3] EFFECTS OF A TILTED MAGNETIC FIELD ON A 2-DIMENSIONAL ELECTRON GAS [J].

FANG, FF ;

STILES, PJ .

PHYSICAL REVIEW, 1968, 174 (03) :823-&

[4] MAGNETIC-CONDUCTANCE OSCILLATIONS AND INVERSION LAYER SUB-BANDS IN SILICON ON SAPPHIRE [J].

HATANAKA, K ;

ONGA, S ;

YASUDA, Y ;

KAWAJI, S .

SURFACE SCIENCE, 1978, 73 (01) :170-178

[5] ANISOTROPY IN ELECTRICAL PROPERTIES OF [001] SI/[0112] AI2O3 [J].

HUGHES, AJ ;

THORSEN, AC .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (05) :2304-2310

[6] MOBILITY HUMP AND INVERSION LAYER SUBBANDS IN SI ON SAPPHIRE [J].

KAWAJI, S ;

HATANAKA, K ;

NAKAMURA, K ;

ONGA, S .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1976, 41 (03) :1073-1074

[7] ELECTRONIC GROUND-STATE OF INVERSION LAYERS IN MANY-VALLEY SEMICONDUCTORS [J].

KELLY, MJ ;

FALICOV, LM .

PHYSICAL REVIEW B, 1977, 15 (04) :1974-1982

[8]

KLITZING K, 1977, SOLID STATE COMMUN, V24, P703

[9]

KUMMEL R, 1975, Z PHYSIK B, V22, P225

[10]

LANDWEHR G, 1979, SOLID STATE DEVICES, P1

← 1 2 →