SUBSTRATE CURRENT AT CRYOGENIC TEMPERATURES - MEASUREMENTS AND A TWO-DIMENSIONAL MODEL FOR CMOS TECHNOLOGY

被引：59

作者：

HENNING, AK ^{[1
]}

CHAN, NN ^{[1
]}

WATT, JT ^{[1
]}

PLUMMER, JD ^{[1
]}

机构：

[1] INTEL CORP, SANTA CLARA, CA 95051 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 01期

关键词：

D O I：

10.1109/T-ED.1987.22886

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：64 / 74

页数：11

共 47 条

[1] DISTRIBUTION FUNCTIONS AND IONIZATION RATES FOR HOT ELECTRONS IN SEMICONDUCTORS [J].

BARAFF, GA .

PHYSICAL REVIEW, 1962, 128 (06) :2507-&

[2] HOT-ELECTRON-INDUCED DEGRADATION IN MOSFETS AT 77-K [J].

BRACCHITTA, JA ;

HONAN, TL ;

ANDERSON, RL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (09) :1850-1857

[3]

BUBE RH, 1974, ELECTRONIC PROPERTIE, P296

[4] CARRIER MOBILITIES IN SILICON EMPIRICALLY RELATED TO DOPING AND FIELD [J].

CAUGHEY, DM ;

THOMAS, RE .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (12) :2192-+

[5] AN IMPACT IONIZATION MODEL FOR 2D DEVICE SIMULATION [J].

CHAN, N ;

THURGATE, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (12) :1978-1978

[6] IONIZATION RATES FOR ELECTRONS AND HOLES IN SILICON [J].

CHYNOWETH, AG .

PHYSICAL REVIEW, 1958, 109 (05) :1537-1540

[7] ALCOHOL-CONSUMPTION AND BLOOD-PRESSURE - SURVEY OF THE RELATIONSHIP AT A HEALTH-SCREENING CLINIC [J].

COOKE, KM ;

FROST, GW ;

THORNELL, IR ;

STOKES, GS .

MEDICAL JOURNAL OF AUSTRALIA, 1982, 1 (02) :65-69

[8] TEMPERATURE DEPENDENCE OF AVALANCHE MULTIPLICATION IN SEMICONDUCTORS [J].

CROWELL, CR ;

SZE, SM .

APPLIED PHYSICS LETTERS, 1966, 9 (06) :242-&

[9]

EITAN B, 1981, J APPL PHYS, V53, P1244

[10]

FUKUMA M, 1984, IEDM, V84, P621

← 1 2 3 4 5 →