HOT-ELECTRON-INDUCED DEGRADATION IN MOSFETS AT 77-K

被引：12

作者：

BRACCHITTA, JA

HONAN, TL

ANDERSON, RL

机构：

[1] UNIV VERMONT,CYROELECTR LAB,BURLINGTON,VT 05405

[2] UNIV VERMONT,DEPT COMP SCI & ELECT ENGN,CYROELECTR LAB,BURLINGTON,VT 05405

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 09期

关键词：

D O I：

10.1109/T-ED.1985.22208

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1850 / 1857

页数：8

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