TEMPERATURE-DEPENDENCE OF HOT-ELECTRON-INDUCED DEGRADATION IN MOSFETS

[1] TEMPERATURE DEPENDENCE OF AVALANCHE MULTIPLICATION IN SEMICONDUCTORS [J]. APPLIED PHYSICS LETTERS, 1966, 9 (06) : 242 - &

[2] Hu C., 1983, International Electron Devices Meeting 1983. Technical Digest, P176

[3] KO PK, 1982, THESIS UC BERKELEY

[4] MATSUMOTO H, 1981, IEEE T ELECTRON DEV, V28, P923, DOI 10.1109/T-ED.1981.20460

[5] 1 MU-M MOSFET VLSI TECHNOLOGY .4. HOT-ELECTRON DESIGN CONSTRAINTS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 346 - 353

[6] THE EFFECT OF TEMPERATURE ON HOT-ELECTRON TRAPPING IN MOSFETS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (04): : L221 - L222

[7] Sze S. M., 1981, PHYSICS SEMICONDUCTO, P30

[8] AN EMPIRICAL-MODEL FOR DEVICE DEGRADATION DUE TO HOT-CARRIER INJECTION [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (04) : 111 - 113

[9] CORRELATION BETWEEN SUBSTRATE AND GATE CURRENTS IN MOSFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (11) : 1740 - 1744

[10] HOT-ELECTRON CURRENTS IN VERY SHORT CHANNEL MOSFETS [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (07) : 249 - 251

[1] TEMPERATURE DEPENDENCE OF AVALANCHE MULTIPLICATION IN SEMICONDUCTORS [J]. APPLIED PHYSICS LETTERS, 1966, 9 (06) : 242 - &

[2] Hu C., 1983, International Electron Devices Meeting 1983. Technical Digest, P176

[3] KO PK, 1982, THESIS UC BERKELEY

[4] MATSUMOTO H, 1981, IEEE T ELECTRON DEV, V28, P923, DOI 10.1109/T-ED.1981.20460

[5] 1 MU-M MOSFET VLSI TECHNOLOGY .4. HOT-ELECTRON DESIGN CONSTRAINTS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 346 - 353

[6] THE EFFECT OF TEMPERATURE ON HOT-ELECTRON TRAPPING IN MOSFETS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (04): : L221 - L222

[7] Sze S. M., 1981, PHYSICS SEMICONDUCTO, P30

[8] AN EMPIRICAL-MODEL FOR DEVICE DEGRADATION DUE TO HOT-CARRIER INJECTION [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (04) : 111 - 113

[9] CORRELATION BETWEEN SUBSTRATE AND GATE CURRENTS IN MOSFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (11) : 1740 - 1744

[10] HOT-ELECTRON CURRENTS IN VERY SHORT CHANNEL MOSFETS [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (07) : 249 - 251