HOT-ELECTRON CURRENTS IN VERY SHORT CHANNEL MOSFETS

被引：56

作者：

TAM, S ^{[1
]}

HSU, FC ^{[1
]}

HU, C ^{[1
]}

MULLER, RS ^{[1
]}

KO, PK ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY, ELECTR RES LAB, BERKELEY, CA 94720 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 1983年 / 4卷 / 07期

关键词：

D O I：

10.1109/EDL.1983.25721

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：249 / 251

页数：3

共 21 条

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[6]

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Hu C., 1979, PROC INT ELECT DEVIC, P22, DOI [10.1109/IEDM.1979.189529, DOI 10.1109/IEDM.1979.189529]

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[9]

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[10]

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