HOLDING TIME DEGRADATION IN DYNAMIC MOS RAM BY INJECTION-INDUCED ELECTRON CURRENTS

被引：26

作者：

EITAN, B ^{[1
]}

FROHMANBENTCHKOWSKY, D ^{[1
]}

SHAPPIR, J ^{[1
]}

机构：

[1] HEBREW UNIV JERUSALEM,SCH APPL SCI & TECHNOL,JERUSALEM 91000,ISRAEL

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1981年 / 28卷 / 12期

关键词：

D O I：

10.1109/T-ED.1981.20639

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1515 / 1519

页数：5

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