TIME-DEPENDENCE OF DEPLETION REGION FORMATION IN PHOSPHORUS-DOPED SILICON MOS DEVICES AT CRYOGENIC TEMPERATURES

被引:34
作者
SAKS, NS
NORDBRYHN, A
机构
[1] Naval Research Laboratory, Washington
关键词
D O I
10.1063/1.325851
中图分类号
O59 [应用物理学];
学科分类号
摘要
The time dependence of depletion region formation in 1015/ cm3 phosphorus-doped silicon MOS devices in the temperature range 14-25 °K has been observed using three different experiments: fast ramp C-V measurements, pulsed capacitor measurements, and pulsed transistor measurements. It is observed that the time required to form a depletion region in thermal equilibrium is strongly dependent on the applied gate bias. Following the application of a gate bias from accumulation to deep depletion, a peak is observed in the substrate current versus time. These results are explained by the dependence of the electron-emission rate from the phosphorus donors on the electric field in the semiconductor (Poole-Frenkel effect). Calculations from a one-dimensional model including the field emission effect are shown to predict the major features of the data.
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页码:6962 / 6968
页数:7
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