共 14 条
Atomic layer deposition of metal oxides on pristine and functionalized graphene
被引:613
作者:

Wang, Xinran
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机构: Stanford Univ, Dept Chem, Stanford, CA 94305 USA

Tabakman, Scott M.
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h-index: 0
机构: Stanford Univ, Dept Chem, Stanford, CA 94305 USA

Dai, Hongjie
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h-index: 0
机构:
Stanford Univ, Dept Chem, Stanford, CA 94305 USA Stanford Univ, Dept Chem, Stanford, CA 94305 USA
机构:
[1] Stanford Univ, Dept Chem, Stanford, CA 94305 USA
关键词:
D O I:
10.1021/ja8023059
中图分类号:
O6 [化学];
学科分类号:
0703 ;
摘要:
We investigate atomic layer deposition (ALD) of metal oxide on pristine and functionalized graphene. On pristine graphene, ALD coating can only actively grow on edges and defect sites, where dangling bonds or surface groups react with ALD precursors. This affords a simple method to decorate and probe single defect sites in graphene planes. We used perylene tetracarboxylic acid (PTCA) to functionalize the graphene surface and selectively introduced densely packed surface groups on graphene. Uniform ultrathin ALD coating on PTCA graphene was achieved over a large area. The functionalization method could be used to integrate ultrathin high-k dielectrics in future graphene electronics.
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页码:8152 / +
页数:3
相关论文
共 14 条
[1]
Atomic layer deposition on suspended single-walled carbon nanotubes via gas-phase noncovalent functionalization
[J].
Farmer, DB
;
Gordon, RG
.
NANO LETTERS,
2006, 6 (04)
:699-703

Farmer, DB
论文数: 0 引用数: 0
h-index: 0
机构: Harvard Univ, Dept Chem & Biol Chem, Cambridge, MA 02138 USA

Gordon, RG
论文数: 0 引用数: 0
h-index: 0
机构:
Harvard Univ, Dept Chem & Biol Chem, Cambridge, MA 02138 USA Harvard Univ, Dept Chem & Biol Chem, Cambridge, MA 02138 USA
[2]
The rise of graphene
[J].
Geim, A. K.
;
Novoselov, K. S.
.
NATURE MATERIALS,
2007, 6 (03)
:183-191

Geim, A. K.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England

Novoselov, K. S.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England
[3]
Low-temperature Al2O3 atomic layer deposition
[J].
Groner, MD
;
Fabreguette, FH
;
Elam, JW
;
George, SM
.
CHEMISTRY OF MATERIALS,
2004, 16 (04)
:639-645

Groner, MD
论文数: 0 引用数: 0
h-index: 0
机构: Univ Colorado, Dept Chem & Biochem, Boulder, CO 80309 USA

Fabreguette, FH
论文数: 0 引用数: 0
h-index: 0
机构: Univ Colorado, Dept Chem & Biochem, Boulder, CO 80309 USA

Elam, JW
论文数: 0 引用数: 0
h-index: 0
机构: Univ Colorado, Dept Chem & Biochem, Boulder, CO 80309 USA

George, SM
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Colorado, Dept Chem & Biochem, Boulder, CO 80309 USA Univ Colorado, Dept Chem & Biochem, Boulder, CO 80309 USA
[4]
Direct evidence for atomic defects in graphene layers
[J].
Hashimoto, A
;
Suenaga, K
;
Gloter, A
;
Urita, K
;
Iijima, S
.
NATURE,
2004, 430 (7002)
:870-873

Hashimoto, A
论文数: 0 引用数: 0
h-index: 0
机构: Natl Inst Adv Ind Sci & Technol, Res Ctr Adv Carbon Mat, Tsukuba, Ibaraki 3058565, Japan

Suenaga, K
论文数: 0 引用数: 0
h-index: 0
机构:
Natl Inst Adv Ind Sci & Technol, Res Ctr Adv Carbon Mat, Tsukuba, Ibaraki 3058565, Japan Natl Inst Adv Ind Sci & Technol, Res Ctr Adv Carbon Mat, Tsukuba, Ibaraki 3058565, Japan

论文数: 引用数:
h-index:
机构:

Urita, K
论文数: 0 引用数: 0
h-index: 0
机构: Natl Inst Adv Ind Sci & Technol, Res Ctr Adv Carbon Mat, Tsukuba, Ibaraki 3058565, Japan

Iijima, S
论文数: 0 引用数: 0
h-index: 0
机构: Natl Inst Adv Ind Sci & Technol, Res Ctr Adv Carbon Mat, Tsukuba, Ibaraki 3058565, Japan
[5]
SCANNING TUNNELING MICROSCOPE CONTRAST OF PERYLENE-3,4,9,10-TETRACARBOXYLIC-DIANHYDRIDE ON GRAPHITE AND ITS APPLICATION TO THE STUDY OF EPITAXY
[J].
HOSHINO, A
;
ISODA, S
;
KURATA, H
;
KOBAYASHI, T
.
JOURNAL OF APPLIED PHYSICS,
1994, 76 (07)
:4113-4120

HOSHINO, A
论文数: 0 引用数: 0
h-index: 0
机构: Institute for Chemical Research, Kyoto University, Uji

ISODA, S
论文数: 0 引用数: 0
h-index: 0
机构: Institute for Chemical Research, Kyoto University, Uji

KURATA, H
论文数: 0 引用数: 0
h-index: 0
机构: Institute for Chemical Research, Kyoto University, Uji

KOBAYASHI, T
论文数: 0 引用数: 0
h-index: 0
机构: Institute for Chemical Research, Kyoto University, Uji
[6]
Atomic layer deposition (ALD):: from precursors to thin film structures
[J].
Leskelä, M
;
Ritala, M
.
THIN SOLID FILMS,
2002, 409 (01)
:138-146

Leskelä, M
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Helsinki, Dept Chem, FIN-00014 Helsinki, Finland Univ Helsinki, Dept Chem, FIN-00014 Helsinki, Finland

Ritala, M
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Helsinki, Dept Chem, FIN-00014 Helsinki, Finland Univ Helsinki, Dept Chem, FIN-00014 Helsinki, Finland
[7]
Chemically derived, ultrasmooth graphene nanoribbon semiconductors
[J].
Li, Xiaolin
;
Wang, Xinran
;
Zhang, Li
;
Lee, Sangwon
;
Dai, Hongjie
.
SCIENCE,
2008, 319 (5867)
:1229-1232

Li, Xiaolin
论文数: 0 引用数: 0
h-index: 0
机构:
Stanford Univ, Dept Chem, Stanford, CA 94305 USA
Stanford Univ, Adv Mat Lab, Stanford, CA 94305 USA Stanford Univ, Dept Chem, Stanford, CA 94305 USA

Wang, Xinran
论文数: 0 引用数: 0
h-index: 0
机构:
Stanford Univ, Dept Chem, Stanford, CA 94305 USA
Stanford Univ, Adv Mat Lab, Stanford, CA 94305 USA Stanford Univ, Dept Chem, Stanford, CA 94305 USA

Zhang, Li
论文数: 0 引用数: 0
h-index: 0
机构:
Stanford Univ, Dept Chem, Stanford, CA 94305 USA
Stanford Univ, Adv Mat Lab, Stanford, CA 94305 USA Stanford Univ, Dept Chem, Stanford, CA 94305 USA

Lee, Sangwon
论文数: 0 引用数: 0
h-index: 0
机构:
Stanford Univ, Dept Chem, Stanford, CA 94305 USA
Stanford Univ, Adv Mat Lab, Stanford, CA 94305 USA Stanford Univ, Dept Chem, Stanford, CA 94305 USA

Dai, Hongjie
论文数: 0 引用数: 0
h-index: 0
机构:
Stanford Univ, Dept Chem, Stanford, CA 94305 USA
Stanford Univ, Adv Mat Lab, Stanford, CA 94305 USA Stanford Univ, Dept Chem, Stanford, CA 94305 USA
[8]
DNA functionalization of carbon nanotubes for ultrathin atomic layer deposition of high κ dielectrics for nanotube transistors with 60 mV/decade switching
[J].
Lu, YR
;
Bangsaruntip, S
;
Wang, XR
;
Zhang, L
;
Nishi, Y
;
Dai, HJ
.
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY,
2006, 128 (11)
:3518-3519

Lu, YR
论文数: 0 引用数: 0
h-index: 0
机构: Stanford Univ, Dept Chem, Stanford, CA 94305 USA

Bangsaruntip, S
论文数: 0 引用数: 0
h-index: 0
机构: Stanford Univ, Dept Chem, Stanford, CA 94305 USA

Wang, XR
论文数: 0 引用数: 0
h-index: 0
机构: Stanford Univ, Dept Chem, Stanford, CA 94305 USA

Zhang, L
论文数: 0 引用数: 0
h-index: 0
机构: Stanford Univ, Dept Chem, Stanford, CA 94305 USA

Nishi, Y
论文数: 0 引用数: 0
h-index: 0
机构: Stanford Univ, Dept Chem, Stanford, CA 94305 USA

Dai, HJ
论文数: 0 引用数: 0
h-index: 0
机构:
Stanford Univ, Dept Chem, Stanford, CA 94305 USA Stanford Univ, Dept Chem, Stanford, CA 94305 USA
[9]
Two-dimensional atomic crystals
[J].
Novoselov, KS
;
Jiang, D
;
Schedin, F
;
Booth, TJ
;
Khotkevich, VV
;
Morozov, SV
;
Geim, AK
.
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA,
2005, 102 (30)
:10451-10453

Novoselov, KS
论文数: 0 引用数: 0
h-index: 0
机构: Univ Manchester, Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England

Jiang, D
论文数: 0 引用数: 0
h-index: 0
机构: Univ Manchester, Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England

Schedin, F
论文数: 0 引用数: 0
h-index: 0
机构: Univ Manchester, Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England

Booth, TJ
论文数: 0 引用数: 0
h-index: 0
机构: Univ Manchester, Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England

Khotkevich, VV
论文数: 0 引用数: 0
h-index: 0
机构: Univ Manchester, Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England

Morozov, SV
论文数: 0 引用数: 0
h-index: 0
机构: Univ Manchester, Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England

Geim, AK
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Manchester, Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England Univ Manchester, Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England
[10]
Electronic transport in locally gated graphene nanoconstrictions
[J].
Oezyilmaz, Barbaros
;
Jarillo-Herrero, Pablo
;
Efetov, Dmitri
;
Kim, Philip
.
APPLIED PHYSICS LETTERS,
2007, 91 (19)

论文数: 引用数:
h-index:
机构:

论文数: 引用数:
h-index:
机构:

Efetov, Dmitri
论文数: 0 引用数: 0
h-index: 0
机构:
Columbia Univ, Dept Phys, New York, NY 10027 USA Columbia Univ, Dept Phys, New York, NY 10027 USA

Kim, Philip
论文数: 0 引用数: 0
h-index: 0
机构:
Columbia Univ, Dept Phys, New York, NY 10027 USA Columbia Univ, Dept Phys, New York, NY 10027 USA