Electronic transport in locally gated graphene nanoconstrictions

被引：154

作者：

Oezyilmaz, Barbaros ^{[1
]}

Jarillo-Herrero, Pablo ^{[1
]}

Efetov, Dmitri ^{[1
]}

Kim, Philip ^{[1
]}

机构：

[1] Columbia Univ, Dept Phys, New York, NY 10027 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 19期

基金：

美国国家科学基金会;

关键词：

Coulomb blockade - Deposition - Electron transitions - Electronic properties - Etching - Gate dielectrics;

D O I：

10.1063/1.2803074

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have developed the combination of an etching and deposition techniques that enables the fabrication of locally gated graphene nanostructures of arbitrary design. Employing this method, we have fabricated graphene nanoconstrictions with local tunable transmission and characterized their electronic properties. An order of magnitude enhanced gate efficiency is achieved adopting the local gate geometry with thin dielectric gate oxide. A complete turn off of the device is demonstrated as a function of the local gate voltage. Such strong suppression of device conductance was found to be due to both quantum confinement and Coulomb blockade effects in the constricted graphene nanostructures.

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页数：3

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