Thermoelectric power of the Si/Si0.8Ge0.2 two-dimensional hole gas

被引：7

作者：

Mironov, OA

Gerleman, IG

Phillips, PJ

Parker, EHC

Tsaousidou, M

Butcher, PN

Whall, TE

机构：

[1] Department of Physics, University of Warwick

[2] Inst. Radiophysics and Electronics, Natl. Academy of Sciences of Ukraine, Kharkov 310085

来源：

THIN SOLID FILMS | 1997年 / 294卷 / 1-2期

关键词：

thermoelectrics; hole gas; silicon; germanium;

D O I：

10.1016/S0040-6090(96)09328-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The thermal conductivities and the thermoelectric powers of two-dimensional hole gases in fully strained Si/Si0.8Ge0.2 heterostructures have been measured for the first lime in the temperature range 3 K to 25 K, and for carrier sheet densities in the range 0.2 to 1 x 10(12) cm(-2). The thermopower is dominated by the phonon drag contribution and a fit to theory yields a value of 4.5 eV for the acoustic phonon deformation potential, with no other adjustable parameters. (C) 1997 Elsevier Science S.A.

引用

页码：182 / 185

页数：4

共 13 条

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Ashcroft N.W., 1976, Solid state physics Holt, Rinehart and Winston, Vfirst

[2]

Brunthaler G, 1996, HOT CARRIERS IN SEMICONDUCTORS, P449

[3] EFFECTIVE MASS AND MOBILITY OF HOLES IN STRAINED SI1-XGEX LAYERS ON (001) SI1-YGEY SUBSTRATE [J].