EFFECTIVE-MASS AND BAND NONPARABOLICITY IN REMOTE DOPED SI/SI0.8GE0.2 QUANTUM-WELLS

被引：20

作者：

WHALL, TE ^{[1
]}

PLEWS, AD ^{[1
]}

MATTEY, NL ^{[1
]}

PHILLIPS, PJ ^{[1
]}

EKENBERG, U ^{[1
]}

机构：

[1] ROYAL INST TECHNOL,DEPT PHYS,S-10044 STOCKHOLM,SWEDEN

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 20期

关键词：

D O I：

10.1063/1.113501

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effective masses in remote doped Si/Si0.8Ge0.2/Si quantum wells having sheet densities, Ns in the range 2×1011-1.1×1012cm-2 have been determined from the temperature dependencies of the Shubnikov-de Haas oscillations. The values obtained increase with magnetic field and Ns. This behavior is taken as evidence for the nonparabolicity of the valence band and accounts for the discrepancies in previously reported masses. Self-consistent band structure calculations for a triangular confinement of the carriers have also been carried out and provide confirmation of the increase in mass with Ns. Theory and experiment give extrapolated Γ point effective masses of 0.21 and 0.20 of the free-electron mass, respectively.© 1995 American Institute of Physics.

引用

页码：2724 / 2726

页数：3

共 16 条

[1] VERY HIGH 2-DIMENSIONAL HOLE GAS MOBILITIES IN STRAINED SILICON-GERMANIUM [J].