CYCLOTRON EFFECTIVE-MASS OF HOLES IN SI1-XGEX/SI QUANTUM-WELLS - STRAIN AND NONPARABOLICITY EFFECTS

被引：18

作者：

CHENG, JP ^{[1
]}

KESAN, VP ^{[1
]}

GRUTZMACHER, DA ^{[1
]}

SEDGWICK, TO ^{[1
]}

机构：

[1] IBM CORP,DIV RES,TJ WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 13期

关键词：

D O I：

10.1063/1.111830

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The Ge-composition dependence of cyclotron effective mass of quasi-two-dimensional holes in strained Si1-xGex/Si quantum well structures has been investigated by far-infrared magneto-optical spectroscopy at low temperatures and high magnetic fields up to 23 T. The in-plane effective mass determined from cyclotron resonance energies is much less than that of unstrained Si1-xGex alloys and decreases systematically from 0.40m(e) to 0.29m(e) as the Ge composition increases from x = 0.13 to x = 0.37, indicating the importance of the strain effect on the valence-band structure. The nonparabolicity correction is significant in explaining the discrepancy between the measured values and the calculated band-edge masses.

引用

页码：1681 / 1683

页数：3

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