CYCLOTRON-RESONANCE OF TWO-DIMENSIONAL HOLES IN STRAINED-LAYER QUANTUM WELL STRUCTURE OF (100)IN0.20GA0.80AS GAAS

被引：19

作者：

LIN, SY ^{[1
]}

LIU, CT ^{[1
]}

TSUI, DC ^{[1
]}

JONES, ED ^{[1
]}

DAWSON, LR ^{[1
]}

机构：

[1] SANDIA NATL LABS,ALBUQUERQUE,NM 87185

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 07期

关键词：

D O I：

10.1063/1.101816

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：666 / 668

页数：3

共 17 条

[1]

CHOU MJ, 1985, MATER RES SOC S P, V37, P7

[2] QUANTUM-WELL PARA-CHANNEL ALGAAS/INGAAS/GAAS HETEROSTRUCTURE INSULATED-GATE FIELD-EFFECT TRANSISTORS WITH VERY HIGH TRANSCONDUCTANCE [J].

DANIELS, RR ;

RUDEN, PP ;

SHUR, M ;

GRIDER, D ;

NOHAVA, TE ;

ARCH, DK .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (07) :355-357

[3] P-CHANNEL, STRAINED QUANTUM-WELL, FIELD-EFFECT TRANSISTOR [J].

DRUMMOND, TJ ;

ZIPPERIAN, TE ;

FRITZ, IJ ;

SCHIRBER, JE ;

PLUT, TA .

APPLIED PHYSICS LETTERS, 1986, 49 (08) :461-463

[4] ELECTRICAL TRANSPORT OF HOLES IN GAAS/INGAAS/GAAS SINGLE STRAINED QUANTUM-WELLS [J].

FRITZ, IJ ;

DRUMMOND, TJ ;

OSBOURN, GC ;

SCHIRBER, JE ;

JONES, ED .

APPLIED PHYSICS LETTERS, 1986, 48 (24) :1678-1680

[5]

FRITZ IJ, 1986, APPL PHYS LETT, V48, P581

[6]

FRITZ IJ, 1987, I PHYS C SER, V83, P233

[7] MICROWAVE PERFORMANCE OF A QUARTER-MICROMETER GATE LOW-NOISE PSEUDOMORPHIC INGAAS/ALGAAS MODULATION-DOPED FIELD-EFFECT TRANSISTOR [J].

HENDERSON, T ;

AKSUN, MI ;

PENG, CK ;

MORKOC, H ;

CHAO, PC ;

SMITH, PM ;

DUH, KHG ;

LESTER, LF .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (12) :649-651

[8]

JONES E, 1987, I PHYS C SER, V83, P227

[9] DETERMINATION OF ENERGY-BAND DISPERSION-CURVES IN STRAINED-LAYER STRUCTURES [J].

JONES, ED ;

LYO, SK ;

FRITZ, IJ ;

KLEM, JF ;

SCHIRBER, JE ;

TIGGES, CP ;

DRUMMOND, TJ .

APPLIED PHYSICS LETTERS, 1989, 54 (22) :2227-2229

[10] BREAKING OF THE USUAL SELECTION RULE FOR MAGNETOLUMINESCENCE IN DOPED SEMICONDUCTOR QUANTUM WELLS [J].

LYO, SK ;

JONES, ED ;

KLEM, JF .

PHYSICAL REVIEW LETTERS, 1988, 61 (19) :2265-2268

← 1 2 →