QUANTUM-WELL PARA-CHANNEL ALGAAS/INGAAS/GAAS HETEROSTRUCTURE INSULATED-GATE FIELD-EFFECT TRANSISTORS WITH VERY HIGH TRANSCONDUCTANCE

被引：28

作者：

DANIELS, RR ^{[1
]}

RUDEN, PP ^{[1
]}

SHUR, M ^{[1
]}

GRIDER, D ^{[1
]}

NOHAVA, TE ^{[1
]}

ARCH, DK ^{[1
]}

机构：

[1] UNIV MINNESOTA,DEPT ELECT ENGN,MINNEAPOLIS,MN 55455

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 07期

关键词：

D O I：

10.1109/55.742

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：355 / 357

页数：3

共 8 条

[1] CURRENT VOLTAGE AND CAPACITANCE VOLTAGE CHARACTERISTICS OF HETEROSTRUCTURE INSULATED-GATE FIELD-EFFECT TRANSISTORS [J].

BAEK, J ;

SHUR, MS ;

DANIELS, RR ;

ARCH, DK ;

ABROKWAH, JK ;

TUFTE, ON .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (08) :1650-1657

[2]

Cirillo N. C. Jr., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P317

[3] REALIZATION OF N-CHANNEL AND P-CHANNEL HIGH-MOBILITY (AL,GA)AS/GAAS HETEROSTRUCTURE INSULATING GATE FETS ON A PLANAR WAFER SURFACE [J].

CIRILLO, NC ;

SHUR, MS ;

VOLD, PJ ;

ABROKWAH, JK ;

TUFTE, ON .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (12) :645-647

[4]

DANIELS RR, 1986, DEC IEDM, P448

[5] P-CHANNEL, STRAINED QUANTUM-WELL, FIELD-EFFECT TRANSISTOR [J].

DRUMMOND, TJ ;

ZIPPERIAN, TE ;

FRITZ, IJ ;

SCHIRBER, JE ;

PLUT, TA .

APPLIED PHYSICS LETTERS, 1986, 49 (08) :461-463

[6] EFFECT OF MISMATCH STRAIN ON BAND-GAP IN III-V SEMICONDUCTORS [J].

KUO, CP ;

VONG, SK ;

COHEN, RM ;

STRINGFELLOW, GB .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) :5428-5432

[7]

LEE CP, 1987, IEEE ELECTR DEVICE L, V8, P85

[8]

RUDEN PP, UNPUB IEEE T ELECTRO

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