CYCLOTRON-RESONANCE STUDIES OF 2-DIMENSIONAL HOLES IN STRAINED SI1-XGEX/SI QUANTUM-WELLS

被引:27
作者
CHENG, JP [1 ]
KESAN, VP [1 ]
GRUTZMACHER, DA [1 ]
SEDGWICK, TO [1 ]
OTT, JA [1 ]
机构
[1] IBM CORP,DIV RES,TJ WATSON RES CTR,YORKTOWN HTS,NY 10598
关键词
D O I
10.1063/1.108627
中图分类号
O59 [应用物理学];
学科分类号
摘要
Far-infrared magnetotransmission spectroscopy has been employed to study p-type modulation-doped strained Si1-xGex/Si quantum wells grown by atmospheric pressure chemical vapor deposition at magnetic fields up to 23 T. The cyclotron resonance (CR) mass of the two-dimensional hole gas (2DHG) in a strained 7.5 nm Si0.63Ge0.37 quantum well was determined to be (0.29+/-0.02)m0 for a 2D hole density of 2.3x10(12)/cm2 at 3 K. The CR mass of 2DHGs in strained Si1-xGex is comparable to previous measurements of the CR mass of 2DHGs in strained InyGa1-yAs with similar 2D hole densities.
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页码:1522 / 1524
页数:3
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