CYCLOTRON-RESONANCE STUDIES OF 2-DIMENSIONAL HOLES IN STRAINED SI1-XGEX/SI QUANTUM-WELLS

被引：27

作者：

CHENG, JP ^{[1
]}

KESAN, VP ^{[1
]}

GRUTZMACHER, DA ^{[1
]}

SEDGWICK, TO ^{[1
]}

OTT, JA ^{[1
]}

机构：

[1] IBM CORP,DIV RES,TJ WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 13期

关键词：

D O I：

10.1063/1.108627

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Far-infrared magnetotransmission spectroscopy has been employed to study p-type modulation-doped strained Si1-xGex/Si quantum wells grown by atmospheric pressure chemical vapor deposition at magnetic fields up to 23 T. The cyclotron resonance (CR) mass of the two-dimensional hole gas (2DHG) in a strained 7.5 nm Si0.63Ge0.37 quantum well was determined to be (0.29+/-0.02)m0 for a 2D hole density of 2.3x10(12)/cm2 at 3 K. The CR mass of 2DHGs in strained Si1-xGex is comparable to previous measurements of the CR mass of 2DHGs in strained InyGa1-yAs with similar 2D hole densities.

引用

页码：1522 / 1524

页数：3

共 11 条

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