ENERGY-BAND STRUCTURE FOR STRAINED P-TYPE SI1-XGEX

Results of the valence-band structure in strained Si1-xGex are given as a function of the germanium content, x. The interactions between the p3/2 and p1/2 bands are taken into account by using a 6 X 6 Hamiltonian in the form of the JM(J) representation. The Hamiltonian is given in two parts, viz., the unstrained Hamiltonian of Dresselhaus, Kip, and Kittel, and the strained Hamiltonian of Kleiner and Roth. With this 6 X 6 Hamiltonian, the hole-energy spectrum for the two p3/2 bands and the p1/2 band is obtained; knowledge of which is crucial for determining pertinent electronic-transport data.