共 18 条
[1]
INFLUENCE OF UNIAXIAL STRESS ON INDIRECT ABSORPTION EDGE IN SILICON AND GERMANIUM
[J].
PHYSICAL REVIEW,
1966, 143 (02)
:636-&
[3]
GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1984, 2 (02)
:436-440
[4]
BIR GL, 1974, SYMMETRY STRAIN INDU, P469
[5]
INTRINSIC OPTICAL ABSORPTION IN GERMANIUM-SILICON ALLOYS
[J].
PHYSICAL REVIEW,
1958, 109 (03)
:695-710
[9]
THEORY OF CYCLOTRON RESONANCE IN STRAINED SILICON CRYSTALS
[J].
PHYSICAL REVIEW,
1963, 129 (03)
:1029-&
[10]
QUANTUM RESONANCES IN VALENCE BANDS OF GERMANIUM .2. CYCLOTRON RESONANCES IN UNIAXIALLY STRESSED CRYSTALS
[J].
PHYSICAL REVIEW B,
1974, 9 (10)
:4219-4257