INPLANE HOLE EFFECTIVE MASSES IN INXGA1-XAS/AL0.15GA0.85AS MODULATION-DOPED HETEROSTRUCTURES

被引：24

作者：

JAFFE, M ^{[1
]}

OH, JE ^{[1
]}

PAMULAPATI, J ^{[1
]}

SINGH, J ^{[1
]}

BHATTACHARYA, P ^{[1
]}

机构：

[1] UNIV MICHIGAN,DEPT ELECT ENGN & COMP SCI,SOLID STATE ELECTR LAB,ANN ARBOR,MI 48109

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 23期

关键词：

D O I：

10.1063/1.101121

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2345 / 2346

页数：2

共 5 条

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[2]

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[4] LARGE VALENCE-BAND NONPARABOLICITY AND TAILORABLE HOLE MASSES IN STRAINED-LAYER SUPERLATTICES [J].

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DAWSON, LR ;

DOYLE, BL ;

FRITZ, IJ .

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[5] GAAS/(IN,GA)AS, P-CHANNEL, MULTIPLE STRAINED QUANTUM WELL FIELD-EFFECT TRANSISTORS WITH HIGH TRANSCONDUCTANCE AND HIGH PEAK SATURATED DRAIN CURRENT [J].

ZIPPERIAN, TE ;

DAWSON, LR ;

DRUMMOND, TJ ;

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FRITZ, IJ .

APPLIED PHYSICS LETTERS, 1988, 52 (12) :975-977

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