ELECTRONIC-PROPERTIES OF PSEUDOMORPHIC INGAAS/ALGAAS (ON GAAS) AND INGAAS/INALAS (ON INP) MODFET STRUCTURES

被引：10

作者：

JAFFE, M

SEKIGUCHI, Y

EAST, J

SINGH, J

机构：

[1] Univ of Michigan, United States

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1988年 / 4卷 / 4-5期

关键词：

Acknowledgement - This work was supported by the Na-; ional Science Foundation(the MRG prograrr)and b; r the US Army Research Officetgrant No.DAAL03-87- K-0007).0ne of us; M.J; gratefully acknowledges the generous support of the Eastman Kodak Company;

D O I：

10.1016/0749-6036(88)90207-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：395 / 404

页数：10

共 11 条

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[10] HIGH-FREQUENCY NOISE OF INYGA1-YAS/ALXGA1-XAS MODFETS AND COMPARISON TO GAAS/ALXGA1-XAS MODFETS
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