GAAS/(IN,GA)AS, P-CHANNEL, MULTIPLE STRAINED QUANTUM WELL FIELD-EFFECT TRANSISTORS WITH HIGH TRANSCONDUCTANCE AND HIGH PEAK SATURATED DRAIN CURRENT

被引：55

作者：

ZIPPERIAN, TE

DAWSON, LR

DRUMMOND, TJ

SCHIRBER, JE

FRITZ, IJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 12期

关键词：

D O I：

10.1063/1.99246

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：975 / 977

页数：3

共 20 条

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