DEVICE CHARACTERIZATION OF P-CHANNEL ALGAAS/GAAS MIS-LIKE HETEROSTRUCTURE FETS

被引：12

作者：

HIRANO, M ^{[1
]}

OE, K ^{[1
]}

YANAGAWA, F ^{[1
]}

TSUBAKI, K ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, MUSASHINO ELECT COMMUN LAB, BASIC RES LABS, MUSASHINO, TOKYO 180, JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 12期

关键词：

D O I：

10.1109/T-ED.1987.23327

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2399 / 2404

页数：6

共 15 条

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[10] COMPLEMENTARY CIRCUIT WITH ALGAAS/GAAS HETEROSTRUCTURE MISFETS EMPLOYING HIGH-MOBILITY TWO-DIMENSIONAL ELECTRON AND HOLE GASES [J].

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