A HIGH THRESHOLD VOLTAGE UNIFORMITY MIS-LIKE HETEROSTRUCTURE FET USING N+-GE AS A GATE ELECTRODE

被引：2

作者：

ARAI, K

MIZUTANI, T

YANAGAWA, F

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1986年 / 7卷 / 03期

关键词：

D O I：

10.1109/EDL.1986.26330

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：158 / 160

页数：3

共 12 条

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