THRESHOLD VOLTAGE BEHAVIOR FOR WSI/ALXGA1-XAS/GAAS MIS-LIKE HETEROSTRUCTURE FET

[1] MODULATION-DOPED FET THRESHOLD VOLTAGE UNIFORMITY OF A HIGH THROUGHPUT 3 INCH MBE SYSTEM [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02): : 252 - 255

[2] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES [J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 665 - 667

[3] ENHANCEMENT-MODE METAL/(AL, GA)AS/GAAS BURIED-INTERFACE FIELD-EFFECT TRANSISTOR (BIFET) [J]. ELECTRONICS LETTERS, 1983, 19 (23) : 986 - 987

[4] BIAS DEPENDENCE AND LIGHT SENSITIVITY OF (AL,GA)AS/GAAS MODFETS AT 77-K [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (12) : 1806 - 1811

[5] A NEW TWO-DIMENSIONAL ELECTRON-GAS FIELD-EFFECT TRANSISTOR FABRICATED ON UNDOPED ALGAAS-GAAS HETEROSTRUCTURE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (03): : L150 - L152

[6] LEE CP, 1983, 41ST DEV RES C BURL

[7] N+-GAAS UNDOPED GAALAS UNDOPED GAAS FIELD-EFFECT TRANSISTOR [J]. ELECTRONICS LETTERS, 1984, 20 (11) : 462 - 463

[8] HIGH ELECTRON-MOBILITY TRANSISTOR LOGIC [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (08) : L598 - L600

[9] A NEW FIELD-EFFECT TRANSISTOR WITH SELECTIVELY DOPED GAAS-N-ALXGA1-XAS HETEROJUNCTIONS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (05) : L225 - L227

[10] Shibatomi A., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P340

[1] MODULATION-DOPED FET THRESHOLD VOLTAGE UNIFORMITY OF A HIGH THROUGHPUT 3 INCH MBE SYSTEM [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02): : 252 - 255

[2] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES [J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 665 - 667

[3] ENHANCEMENT-MODE METAL/(AL, GA)AS/GAAS BURIED-INTERFACE FIELD-EFFECT TRANSISTOR (BIFET) [J]. ELECTRONICS LETTERS, 1983, 19 (23) : 986 - 987

[4] BIAS DEPENDENCE AND LIGHT SENSITIVITY OF (AL,GA)AS/GAAS MODFETS AT 77-K [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (12) : 1806 - 1811

[5] A NEW TWO-DIMENSIONAL ELECTRON-GAS FIELD-EFFECT TRANSISTOR FABRICATED ON UNDOPED ALGAAS-GAAS HETEROSTRUCTURE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (03): : L150 - L152

[6] LEE CP, 1983, 41ST DEV RES C BURL

[7] N+-GAAS UNDOPED GAALAS UNDOPED GAAS FIELD-EFFECT TRANSISTOR [J]. ELECTRONICS LETTERS, 1984, 20 (11) : 462 - 463

[8] HIGH ELECTRON-MOBILITY TRANSISTOR LOGIC [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (08) : L598 - L600

[9] A NEW FIELD-EFFECT TRANSISTOR WITH SELECTIVELY DOPED GAAS-N-ALXGA1-XAS HETEROJUNCTIONS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (05) : L225 - L227

[10] Shibatomi A., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P340