HALL-EFFECT MEASUREMENTS IN P-TYPE INGAAS GAAS STRAINED-LAYER SUPERLATTICES

被引：14

作者：

FRITZ, IJ

DAWSON, LR

DRUMMOND, TJ

SCHIRBER, JE

BIEFELD, RM

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 02期

关键词：

D O I：

10.1063/1.96976

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：139 / 141

页数：3

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[7] TEMPERATURE-DEPENDENCE OF HOLE MOBILITY IN GAAS-GA1-XALXAS HETEROJUNCTIONS
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[8] TEMPERATURE-DEPENDENCE OF THE ELECTRON-MOBILITY IN GAAS-GAALAS HETEROSTRUCTURES
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[9] INXGA1-XAS-INYGA1-YAS STRAINED-LAYER SUPER-LATTICES - A PROPOSAL FOR USEFUL, NEW ELECTRONIC MATERIALS
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[J]. PHYSICAL REVIEW B, 1983, 27 (08): : 5126 - 5128
[10] ELECTRON AND HOLE EFFECTIVE MASSES FOR TWO-DIMENSIONAL TRANSPORT IN STRAINED-LAYER SUPERLATTICES
OSBOURN, GC
[J]. SUPERLATTICES AND MICROSTRUCTURES, 1985, 1 (03) : 223 - 226