A 30-GHZ 1-W POWER HEMT

[1] GUPTA AK, 1985, JUN IEEE MICR MILL W, P50

[2] MICROWAVE-POWER DOUBLE-HETEROJUNCTION HEMTS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (05) : 583 - 589

[3] A MICROWAVE-POWER DOUBLE-HETEROJUNCTION HIGH ELECTRON-MOBILITY TRANSISTOR [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (07) : 341 - 343

[4] HIKOSAKA K, 1983, SEP P NAT CONV DEP S

[5] HIGH-EFFICIENCY MILLIMETER-WAVE GAAS/GAALAS POWER HEMTS [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (09) : 503 - 505

[6] POWER PERFORMANCE OF MICROWAVE HIGH-ELECTRON MOBILITY TRANSISTORS [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (02) : 86 - 87

[7] 35-GHZ PERFORMANCE OF SINGLE AND QUADRUPLE POWER HETEROJUNCTION HEMTS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (10) : 1434 - 1438

[1] GUPTA AK, 1985, JUN IEEE MICR MILL W, P50

[2] MICROWAVE-POWER DOUBLE-HETEROJUNCTION HEMTS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (05) : 583 - 589

[3] A MICROWAVE-POWER DOUBLE-HETEROJUNCTION HIGH ELECTRON-MOBILITY TRANSISTOR [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (07) : 341 - 343

[4] HIKOSAKA K, 1983, SEP P NAT CONV DEP S

[5] HIGH-EFFICIENCY MILLIMETER-WAVE GAAS/GAALAS POWER HEMTS [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (09) : 503 - 505

[6] POWER PERFORMANCE OF MICROWAVE HIGH-ELECTRON MOBILITY TRANSISTORS [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (02) : 86 - 87

[7] 35-GHZ PERFORMANCE OF SINGLE AND QUADRUPLE POWER HETEROJUNCTION HEMTS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (10) : 1434 - 1438