MICROWAVE-POWER DOUBLE-HETEROJUNCTION HEMTS

[1] CAMNITZ LH, 1984, DEC IEDM, P360

[2] BIAS DEPENDENCE OF GAAS AND INP MESFET PARAMETERS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (11) : 1288 - 1296

[3] ENGELMANN RWH, 1976, DEC IEDM, P351

[4] GUPTA AK, 1985, JUN IEEE MICR MILL W, P50

[5] A MICROWAVE-POWER DOUBLE-HETEROJUNCTION HIGH ELECTRON-MOBILITY TRANSISTOR [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (07) : 341 - 343

[6] HIKOSAKA K, 1983, SEP P NAT CONV DEP S

[7] A PACKAGED 20-GHZ 1-W GAAS-MESFET WITH A NOVEL VIA-HOLE PLATED HEAT SINK STRUCTURE [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1984, 32 (03) : 309 - 316

[8] A NEW HIGHLY-CONDUCTIVE (ALGA)AS/GAAS/(ALGA)AS SELECTIVELY-DOPED DOUBLE-HETEROJUNCTION FIELD-EFFECT TRANSISTOR (SD-DH-FET) [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (02): : L61 - L63

[9] JOSHIN K, 1983, JUN IEEE MTT S INT S, P563

[10] MULTIPLE-CHANNEL GAAS ALGAAS HIGH ELECTRON-MOBILITY TRANSISTORS [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (06) : 307 - 310

[1] CAMNITZ LH, 1984, DEC IEDM, P360

[2] BIAS DEPENDENCE OF GAAS AND INP MESFET PARAMETERS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (11) : 1288 - 1296

[3] ENGELMANN RWH, 1976, DEC IEDM, P351

[4] GUPTA AK, 1985, JUN IEEE MICR MILL W, P50

[5] A MICROWAVE-POWER DOUBLE-HETEROJUNCTION HIGH ELECTRON-MOBILITY TRANSISTOR [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (07) : 341 - 343

[6] HIKOSAKA K, 1983, SEP P NAT CONV DEP S

[7] A PACKAGED 20-GHZ 1-W GAAS-MESFET WITH A NOVEL VIA-HOLE PLATED HEAT SINK STRUCTURE [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1984, 32 (03) : 309 - 316

[8] A NEW HIGHLY-CONDUCTIVE (ALGA)AS/GAAS/(ALGA)AS SELECTIVELY-DOPED DOUBLE-HETEROJUNCTION FIELD-EFFECT TRANSISTOR (SD-DH-FET) [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (02): : L61 - L63

[9] JOSHIN K, 1983, JUN IEEE MTT S INT S, P563

[10] MULTIPLE-CHANNEL GAAS ALGAAS HIGH ELECTRON-MOBILITY TRANSISTORS [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (06) : 307 - 310