MULTIPLE-CHANNEL GAAS ALGAAS HIGH ELECTRON-MOBILITY TRANSISTORS

[1] CHARACTERISTICS OF MODULATION-DOPED ALXGA1-XAL/GAAS FIELD-EFFECT TRANSISTORS - EFFECT OF DONOR-ELECTRON SEPARATION [J]. APPLIED PHYSICS LETTERS, 1983, 42 (03) : 262 - 264

[2] A NEW HIGHLY-CONDUCTIVE (ALGA)AS/GAAS/(ALGA)AS SELECTIVELY-DOPED DOUBLE-HETEROJUNCTION FIELD-EFFECT TRANSISTOR (SD-DH-FET) [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (02): : L61 - L63

[3] JUDAPRAWIRA S, 1981, ELECTRON DEVIC LETT, V2, P14

[4] KIKOSAKA K, 1983, SEP P NAT CONV I EL

[5] KIRAKAWA K, 1984, APPL PHYS LETT, V45, P3

[6] Mimura T., 1983, International Electron Devices Meeting 1983. Technical Digest, P99

[7] Sheng N. H., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P352

[8] MODULATION-DOPED GAAS/ALGAAS HETEROJUNCTION FIELD-EFFECT TRANSISTORS (MODFETS), ULTRAHIGH-SPEED DEVICE FOR SUPERCOMPUTERS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (08) : 1015 - 1027

[1] CHARACTERISTICS OF MODULATION-DOPED ALXGA1-XAL/GAAS FIELD-EFFECT TRANSISTORS - EFFECT OF DONOR-ELECTRON SEPARATION [J]. APPLIED PHYSICS LETTERS, 1983, 42 (03) : 262 - 264

[2] A NEW HIGHLY-CONDUCTIVE (ALGA)AS/GAAS/(ALGA)AS SELECTIVELY-DOPED DOUBLE-HETEROJUNCTION FIELD-EFFECT TRANSISTOR (SD-DH-FET) [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (02): : L61 - L63

[3] JUDAPRAWIRA S, 1981, ELECTRON DEVIC LETT, V2, P14

[4] KIKOSAKA K, 1983, SEP P NAT CONV I EL

[5] KIRAKAWA K, 1984, APPL PHYS LETT, V45, P3

[6] Mimura T., 1983, International Electron Devices Meeting 1983. Technical Digest, P99

[7] Sheng N. H., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P352

[8] MODULATION-DOPED GAAS/ALGAAS HETEROJUNCTION FIELD-EFFECT TRANSISTORS (MODFETS), ULTRAHIGH-SPEED DEVICE FOR SUPERCOMPUTERS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (08) : 1015 - 1027