Photonic bandgaps in patterned waveguides of silicon-rich silicon dioxide

被引:7
作者
Neal, RT [1 ]
Zoorob, ME
Charlton, MD
Parker, GJ
Finlayson, CE
Baumberg, JJ
机构
[1] Univ Southampton, Dept Comp Sci & Elect, Southampton SO17 1BJ, Hants, England
[2] Univ Southampton, Dept Phys & Astron, Southampton SO17 1BJ, Hants, England
[3] Mesophoton Ltd, Southampton SO16 7NP, Hants, England
关键词
D O I
10.1063/1.1690106
中图分类号
O59 [应用物理学];
学科分类号
摘要
We describe waveguides of photoluminescent silicon-rich silicon dioxide, which have been patterned by triangular two-dimensional (2D) photonic crystals to give higher-order photonic bandgaps occurring within the luminescence band of the core material. Photonic crystal modification of the photoluminescence spectrum allows identification of angle-tuned photonic bandgaps, in close agreement with 2D plane wave expansion and finite-difference time domain simulations. We discuss the importance of these findings for the development of integrated optical circuitry based on silicon-compatible microelectronics. (C) 2004 American Institute of Physics.
引用
收藏
页码:2415 / 2417
页数:3
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