Photoluminescence from ion-beam cosputtered Si/SiO2 thin films

被引：2

作者：

Allegrini, M

Ciofi, C

Diligenti, A

Fuso, F

Nannini, A

Pellegrini, V

Pennelli, G

机构：

[1] TELECOMMUN UNIV PISA,DIPARTIMENTO INGN INFORMA ELETTRON INFORMAT,I-56126 PISA,ITALY

[2] UNIV PISA,DIPARTIMENTO FIS,I-56126 PISA,ITALY

[3] IST NAZL FIS MAT,I-56126 PISA,ITALY

[4] SCUOLA NORMALE SUPER PISA,I-56126 PISA,ITALY

来源：

SOLID STATE COMMUNICATIONS | 1996年 / 100卷 / 06期

关键词：

D O I：

10.1016/0038-1098(96)00422-X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We report the observation of visible and stable room temperature photoluminescence (PL) from thin composite Si/SiO2 films deposited onto various substrates (Si, SiO2, Al and C) by means of an ion-beam sputtering system. Transmission electron microscopy (TEM) observations of the films deposited on carbon substrates reveal the presence of filamentary structures, with nanometric dimensions, of crystalline silicon embedded in an amorphous matrix. While changes of film composition do not influence the main features of the FL, we found that the PL shape and intensity is strongly dependent on the nature of the substrate. The necessary combination of Si and SiO2 for producing the light-emitting material and the TEM results suggest that quantum confinement of carriers in the silicon nanocrystals is a possible origin of the observed FL. Copyright (C) 1996 Elsevier Science Ltd

引用

页码：403 / 406

页数：4

共 21 条

[1] VISIBLE PHOTOLUMINESCENCE IN HIGHLY PHOTOCONDUCTIVE HYDROGENATED AMORPHOUS-SILICON DEPOSITED BY GLOW-DISCHARGE OF SIH4 HIGHLY DILUTED WITH HE [J].