Microcrystalline silicon prepared by hot-wire chemical vapour deposition for thin film solar cell applications

被引：33

作者：

Klein, S ^{[1
]}

Wolff, J

Finger, F

Carius, R

Wagner, H

Stutzmann, M

机构：

[1] Forschungszentrum Julich, Inst Photovoltaik, D-52425 Julich, Germany

[2] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2002年 / 41卷 / 1AB期

关键词：

microcrystalline silicon; hot-wire CVD; solar cells; spin density; substrate temperature; conductivity; hydrogen content; infrared absorption;

D O I：

10.1143/JJAP.41.L10

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The hot-wire deposition of muc-Si:H at low substrate and filament temperatures improves the material quality substantially. At a substrate temperature of 285degreesC and a filament temperature of 1530degreesC we prepared microcrystalline films with a spin density of N-s = 1 x 10(16)cm(-3) measured by electron spin resonance (ESR) and an oxygen and carbon concentration of 2 x 10(18)cm(-3) at a deposition rate of 2.5 Angstrom(.)s(-1). From infrared spectroscopy we calculated a hydrogen content of 5% in the best films. The spectra did not show absorption from SiO modes. which is typical for nonporous material. By incorporating this material into microcrystalline solar cells. we achieved an initial efficiency of 7%. By reducing the substrate temperature, an even higher efficiency of 7.5% was obtained.

引用

页码：L10 / L12

页数：3

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