Characterization of fluoropolymers for 157 nm chemically amplified resist

被引：20

作者：

Itani, T ^{[1
]}

Toriumi, M ^{[1
]}

Naito, T ^{[1
]}

Ishikawa, S ^{[1
]}

Miyoshi, S ^{[1
]}

Yamazaki, T ^{[1
]}

Watanabe, M ^{[1
]}

机构：

[1] Semicond Leading Edge Technol Inc, Totsuka Ku, Yokohama, Kanagawa 2440817, Japan

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2001年 / 19卷 / 06期

关键词：

D O I：

10.1116/1.1412889

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Fluoropolymers were characterized for 157 nm lithography resist. We obtained superior optical transparencies, with absorption coefficient of 0.01-2 mum(-1) at 157 nm wavelength. The resists based on the fluoropolymers characterized exhibited suitable dissolution behavior into alkaline developer of 0.26 N tetramethylammonium hydroxide solution. Dry-etching resistance of the resist film showed the almost equivalent to conventional ArF resist based on an acrylic polymer. The lithographic evaluation showed that high sensitivities of 1.0-10.0 mJ/cm(2) for 157 nm exposure, and high dissolution contrast. Furthermore, the resolution capability of 95 nm lines and spaces was obtained with proper pattern profiles. These results indicate that 157 nm resist based on fluoropolymers we characterized have enough potential for practical use of 157 nm lithography. (C) 2001 American Vacuum Society.

引用

页码：2705 / 2708

页数：4

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