Synthesis, integration, and electrical properties of individual single-walled carbon nanotubes

被引：122

作者：

Kong, J ^{[1
]}

Zhou, C

Morpurgo, A

Soh, HT

Quate, CF

Marcus, C

Dai, H

机构：

[1] Stanford Univ, Dept Chem, Stanford, CA 94305 USA

[2] Stanford Univ, Dept Phys, Stanford, CA 94305 USA

[3] Stanford Univ, EL Ginzton Lab, Stanford, CA 94305 USA

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1999年 / 69卷 / 03期

关键词：

D O I：

10.1007/s003390051005

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High-quality single-walled carbon nanotubes (SWNTs) are synthesized by chemical vapor deposition (CVD) of methane on silicon-dioxide substrates at controlled locations using patterned catalytic islands. With the synthesized nanotube chips, microfabrication techniques are used to reliably contact individual SWNTs and obtain low contact resistance. The combined chemical synthesis and microfabrication approaches enable systematic characterization of electron transport properties of a large number of individual SWNTs, Results of electrical properties of representative semiconducting and metallic SWNTs are presented. The lowest two-terminal resistance for individual metallic SWNTs (approximate to 5 mu m long) is approximate to 16.5 k Omega measured at 4.2 K.

引用

页码：305 / 308

页数：4

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