Epitaxial aluminum carbide formation in 6H-SiC by high-dose Al+ implantation

被引：12

作者：

Stoemenos, J ^{[1
]}

Pécz, B

Heera, V

机构：

[1] Aristotle Univ Thessaloniki, Dept Phys, GR-54006 Thessaloniki, Greece

[2] Res Inst Tech Phys & Mat Sci, H-1525 Budapest, Hungary

[3] Res Ctr Rossendorf, D-01314 Dresden, Germany

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 18期

关键词：

D O I：

10.1063/1.123910

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Aluminum carbide precipitates are formed after Al ion implantation with dose 3 X 10(17) cm(-2) at 500 degrees C into single crystalline 6H-SiC. The aluminum carbide (Al4C3) precipitates are in epitaxial relation with 6H-SiC matrix, having the following orientation relation, [0001]6H-SiC//[0001]Al4C3, and [11(2) over bar 0]6H-SiC//[11(2) over bar 0]Al4C3, as transmission electron microscopy reveals. The aluminum carbide appears around the maximum of the Al depth distribution. Silicon precipitates were also detected in the same zone. (C) 1999 American Institute of Physics. [S0003-6951(99)00518-5].

引用

页码：2602 / 2604

页数：3

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