Lasing in quantum-dot ensembles with sharp adjustable electronic shells

被引:64
作者
Fafard, S [1 ]
Wasilewski, ZR [1 ]
Allen, CN [1 ]
Hinzer, K [1 ]
McCaffrey, JP [1 ]
Feng, Y [1 ]
机构
[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada
关键词
D O I
10.1063/1.124253
中图分类号
O59 [应用物理学];
学科分类号
摘要
Quantum-dot laser diodes with up to five well-defined electronic shells are fabricated using self-assembled quantum dots (QDs) grown by molecular-beam epitaxy. Shape-engineered stacks of self-aligned QDs with improved uniformity are used to increase the gain in the active region. Lasing is observed in the upper QD shells for small-gain media, and progresses towards the QD ground states for longer cavity lengths. We obtained at 77 K thresholds of J(th)=15 A/cm(2) for a 2 mm cavity lasing in the first excited state (p shell), and J(th)=125 A/cm(2) for a 1 mm cavity lasing in n=3 (d shell). At 300 K for a 1 mm cavity, J(th) is 490 A/cm(2) with lasing in n=4 (f shell). (C) 1999 American Institute of Physics. [S0003-6951(99)04433-2].
引用
收藏
页码:986 / 988
页数:3
相关论文
共 30 条
  • [1] Red-emitting semiconductor quantum dot lasers
    Fafard, S
    Hinzer, K
    Raymond, S
    Dion, M
    McCaffrey, J
    Feng, Y
    Charbonneau, S
    [J]. SCIENCE, 1996, 274 (5291) : 1350 - 1353
  • [2] Temperature effects in semiconductor quantum dot lasers
    Fafard, S
    Hinzer, K
    Springthorpe, AJ
    Feng, Y
    McCaffrey, J
    Charbonneau, S
    Griswold, EM
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1998, 51 (1-3): : 114 - 117
  • [3] Self-assembled quantum dots: five years later
    Fafard, S
    Wasilewski, ZR
    Allen, CN
    Picard, D
    Piva, PG
    McCaffrey, JP
    [J]. SUPERLATTICES AND MICROSTRUCTURES, 1999, 25 (1-2) : 87 - 96
  • [4] Manipulating the energy levels of semiconductor quantum dots
    Fafard, S
    Wasilewski, ZR
    Allen, CN
    Picard, D
    Spanner, M
    McCaffrey, JP
    Piva, PG
    [J]. PHYSICAL REVIEW B, 1999, 59 (23): : 15368 - 15373
  • [5] Fafard S, 1997, PHOTON SPECTRA, V31, P160
  • [6] Fafard S., 1995, PHYS REV B, V52, P5752
  • [7] GROWTH BY MOLECULAR-BEAM EPITAXY AND CHARACTERIZATION OF INAS/GAAS STRAINED-LAYER SUPERLATTICES
    GOLDSTEIN, L
    GLAS, F
    MARZIN, JY
    CHARASSE, MN
    LEROUX, G
    [J]. APPLIED PHYSICS LETTERS, 1985, 47 (10) : 1099 - 1101
  • [8] Grundmann M, 1996, APPL PHYS LETT, V68, P979, DOI 10.1063/1.116118
  • [9] Room-temperature operation of In0.4Ga0.6As/GaAs self-organised quantum dot lasers
    Kamath, K
    Bhattacharya, P
    Sosnowski, T
    Norris, T
    Phillips, J
    [J]. ELECTRONICS LETTERS, 1996, 32 (15) : 1374 - 1375
  • [10] Quantum dot heterostructures: fabrication, properties, lasers (Review)
    Ledentsov, NN
    Ustinov, VM
    Shchukin, VA
    Kop'ev, PS
    Alferov, ZI
    Bimberg, D
    [J]. SEMICONDUCTORS, 1998, 32 (04) : 343 - 365