Lasing in quantum-dot ensembles with sharp adjustable electronic shells

被引：64

作者：

Fafard, S ^{[1
]}

Wasilewski, ZR ^{[1
]}

Allen, CN ^{[1
]}

Hinzer, K ^{[1
]}

McCaffrey, JP ^{[1
]}

Feng, Y ^{[1
]}

机构：

[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 07期

关键词：

D O I：

10.1063/1.124253

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Quantum-dot laser diodes with up to five well-defined electronic shells are fabricated using self-assembled quantum dots (QDs) grown by molecular-beam epitaxy. Shape-engineered stacks of self-aligned QDs with improved uniformity are used to increase the gain in the active region. Lasing is observed in the upper QD shells for small-gain media, and progresses towards the QD ground states for longer cavity lengths. We obtained at 77 K thresholds of J(th)=15 A/cm(2) for a 2 mm cavity lasing in the first excited state (p shell), and J(th)=125 A/cm(2) for a 1 mm cavity lasing in n=3 (d shell). At 300 K for a 1 mm cavity, J(th) is 490 A/cm(2) with lasing in n=4 (f shell). (C) 1999 American Institute of Physics. [S0003-6951(99)04433-2].

引用

页码：986 / 988

页数：3

共 30 条

[21] Lasing at three-dimensionally quantum-confined sublevel of self-organized In0.5Ga0.5As quantum dots by current injection
Shoji, H
Mukai, K
Ohtsuka, N
Sugawara, M
Uchida, T
Ishikawa, H
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1995, 7 (12) : 1385 - 1387
[22] Room temperature CW operation at the ground state of self-formed quantum dot lasers with multi-stacked dot layer
Shoji, H
Nakata, Y
Mukai, K
Sugiyama, Y
Sugawara, M
Yokoyama, N
Ishikawa, H
[J]. ELECTRONICS LETTERS, 1996, 32 (21) : 2023 - 2024
[23] Self-formed InGaAs quantum dot lasers with multi-stacked dot layer
Shoji, H
Nakata, Y
Mukai, K
Sugiyama, Y
Sugawara, M
Yokoyama, N
Ishikawa, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1996, 35 (7B): : L903 - L905
[24] Vertically aligned and electronically coupled growth induced InAs islands in GaAs
Solomon, GS
Trezza, JA
Marshall, AF
Harris, JS
[J]. PHYSICAL REVIEW LETTERS, 1996, 76 (06) : 952 - 955
[25] Narrow photoluminescence line width of closely stacked InAs self-assembled quantum dot structures
Sugiyama, Y
Nakata, Y
Futatsugi, T
Sugawara, M
Awano, Y
Yokoyama, N
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1997, 36 (2A): : L158 - L161
[26] Size and shape engineering of vertically stacked self-assembled quantum dots
Wasilewski, ZR
Fafard, S
McCaffrey, JP
[J]. JOURNAL OF CRYSTAL GROWTH, 1999, 201 : 1131 - 1135
[27] Exciton-exciton interactions in highly excited quantum dots in a magnetic field
Wojs, A
Hawrylak, P
[J]. SOLID STATE COMMUNICATIONS, 1996, 100 (07) : 487 - 491
[28] Electronic structure and magneto-optics of self-assembled quantum dots
Wojs, A
Hawrylak, P
Fafard, S
Jacak, L
[J]. PHYSICAL REVIEW B, 1996, 54 (08): : 5604 - 5608
[29] Observation of lasing from vertically self-organized InAs three-dimensional island quantum boxes on GaAs(001)
Xie, Q
Kalburge, A
Chen, P
Madhukar, A
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1996, 8 (08) : 965 - 967
[30] VERTICALLY SELF-ORGANIZED INAS QUANTUM BOX ISLANDS ON GAAS(100)
XIE, QH
MADHUKAR, A
CHEN, P
KOBAYASHI, NP
[J]. PHYSICAL REVIEW LETTERS, 1995, 75 (13) : 2542 - 2545

← 1 2 3 →