Self-formed InGaAs quantum dot lasers with multi-stacked dot layer

被引：38

作者：

Shoji, H

Nakata, Y

Mukai, K

Sugiyama, Y

Sugawara, M

Yokoyama, N

Ishikawa, H

机构：

[1] Fujitsu Lab Ltd, Atsugi, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1996年 / 35卷 / 7B期

关键词：

semiconductor laser; quantum dot; self-formed dot; InGaAs; molecular beam epitaxy; Stranski-Krastanow growth;

D O I：

10.1143/JJAP.35.L903

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Systematic investigation of lasing characteristics of self-formed InGaAs quantum dot lasers with multi-stacked dot layer is reported. We show that the lasing wavelength is strongly dependent on the number of quantum dot layers and the cavity length. Discontinuous shifts of the lasing wavelength from a high-order subband to a lower-order subband are clearly observed with increasing number of quantum dot layers and with decreasing cavity loss. The possibility of lasing at the ground state of quantum dots is also quantitatively discussed.

引用

收藏

页码：L903 / L905

页数：3

相关论文

共 9 条

[1] MULTIDIMENSIONAL QUANTUM WELL LASER AND TEMPERATURE-DEPENDENCE OF ITS THRESHOLD CURRENT [J].

ARAKAWA, Y ;

SAKAKI, H .

APPLIED PHYSICS LETTERS, 1982, 40 (11) :939-941

[2] LOW-THRESHOLD, LARGE T-O INJECTION-LASER EMISSION FROM (INGA)AS QUANTUM DOTS [J].

KIRSTAEDTER, N ;

LEDENTSOV, NN ;

GRUNDMANN, M ;

BIMBERG, D ;

USTINOV, VM ;

RUVIMOV, SS ;

MAXIMOV, MV ;

KOPEV, PS ;

ALFEROV, ZI ;

RICHTER, U ;

WERNER, P ;

GOSELE, U ;

HEYDENREICH, J .

ELECTRONICS LETTERS, 1994, 30 (17) :1416-1417

[3] DIRECT FORMATION OF QUANTUM-SIZED DOTS FROM UNIFORM COHERENT ISLANDS OF INGAAS ON GAAS-SURFACES [J].

LEONARD, D ;

KRISHNAMURTHY, M ;

REAVES, CM ;

DENBAARS, SP ;

PETROFF, PM .

APPLIED PHYSICS LETTERS, 1993, 63 (23) :3203-3205

[4] LUMINESCENCE FROM EXCITED-STATES IN STRAIN-INDUCED INXGA1-XAS QUANTUM DOTS [J].

LIPSANEN, H ;

SOPANEN, M ;

AHOPELTO, J .

PHYSICAL REVIEW B, 1995, 51 (19) :13868-13871

[5]

Mukai K, 1996, APPL PHYS LETT, V68, P3013, DOI 10.1063/1.116681

[6]

NOTZEL R, 1994, APPL PHYS LETT, V65, P457, DOI 10.1063/1.113021

[7] HIGHLY UNIFORM INGAAS/GAAS QUANTUM DOTS (SIMILAR-TO-15 NM) BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION [J].

OSHINOWO, J ;

NISHIOKA, M ;

ISHIDA, S ;

ARAKAWA, Y .

APPLIED PHYSICS LETTERS, 1994, 65 (11) :1421-1423

[8] Lasing at three-dimensionally quantum-confined sublevel of self-organized In0.5Ga0.5As quantum dots by current injection [J].

Shoji, H ;

Mukai, K ;

Ohtsuka, N ;

Sugawara, M ;

Uchida, T ;

Ishikawa, H .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1995, 7 (12) :1385-1387

[9] Stacked InAs self-assembled quantum dots on (001)GaAs grown by molecular beam epitaxy [J].

Sugiyama, Y ;

Nakata, Y ;

Imamura, K ;

Muto, S ;

Yokoyama, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (2B) :1320-1324