Lasing at three-dimensionally quantum-confined sublevel of self-organized In0.5Ga0.5As quantum dots by current injection

被引：121

作者：

Shoji, H

Mukai, K

Ohtsuka, N

Sugawara, M

Uchida, T

Ishikawa, H

机构：

[1] Fujitsu Laboratories Ltd., Atsugi 243–01

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1995年 / 7卷 / 12期

关键词：

Electric currents - Electroluminescence - Oscillations - Semiconducting gallium arsenide - Semiconducting indium compounds - Semiconductor device structures - Semiconductor quantum dots - Substrates - Three dimensional - Transmission electron microscopy - X ray analysis;

D O I：

10.1109/68.477257

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A laser oscillation from self-organized In0.5Ga0.5As quantum dots is achieved at 80 K by current injection. Lasing at a three-dimensionally quantum confined sublevel of the In0.5Ga0.5As quantum dots is clearly demonstrated for the first time by electroluminescence and diamagnetic energy shift measurement. The results predict the possibility of ultra low threshold current operation of quantum dot lasers.

引用

页码：1385 / 1387

页数：3

共 9 条

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